2007. 6. 11 1/2 semiconductor technical data KDV241E revision no : 0 antenna tunning application features low tuning voltage : v t =3v. high capacitance ratio : c 0.5v /c 3v =3.5(min.) excellent c-v characteristics, and small tracking error. maximum rating (ta=25 ) esc dim millimeters a b c d e 1.60 0.10 1.20 0.10 0.80 0.10 0.30 0.05 0.60 0.10 cathode mark d c b a 1 2 e 1. anode 2. cathode f 0.13 0.05 f + _ + _ + _ + _ + _ + _ electrical characteristics (ta=25 ) variable capacitance diode silicon epitaxial planar diode characteristic symbol rating unit reverse voltage v r 10 v junction temperature t j 125 storage temperature range t stg -55 125 characteristic symbol test condition min. typ. max. unit reverse current i r v r =25v - - 10 na capacitance c 0.5v v r =0.5v, f=1mhz 7.2 - 8.9 pf c 1.5v v r =1.5v, f=1mhz 3.3 - 4.2 c 3v v r =3v, f=1mhz 1.8 - 2 capacitance ratio c 0.5v /c 3v - 3.5 - - - series resistance r s v r =0.5v, f=470mhz - - 1.3 type name marking tm
2007. 6. 11 2/2 KDV241E revision no : 0 reverse current i (na) r 0 junction temperature t ( c) j i - t rj 20 40 60 80 100 10 10 2 t total capacitance c (pf) 0 1 0 reverse voltage v (v) r tr c - v 10 4 2 6 10 14 8 12 f=1mhz ta=25 c
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